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用公式阐明了一种模型以说明暗电流(J_D)的主要来源,J_D是异质结肖特基(schottky)栅电荷耦合器件(CCD)单像素上的暗电流。这个模型预示了J_D对温度的依赖关系并表明对于适当地制作的栅、沟道内的体内产生是暗电流的主要来源。为了证实这模型的正确性,在23—55℃的温度范围内测试Al_(0.3)Ga_(0.7)As/GaAs n—P+异质结CCD阵列的暗电流。在室温下典型的值是J_D≈83PA/cm~2,有些像素的J_D低到43PA/cm~2。这些是迄今报导的CCD结构的最低的暗电流。55℃的数据表明、J_D升到～1nAl/cm~2。数据更进一步证实了模型预示的J_D对温度的依赖关系。
A model is formulated to illustrate the primary source of dark current (J_D), which is the dark current on a single pixel of a heterojunction Schottky gate charge-coupled device (CCD). This model predicts the dependence of J_D on temperature and shows that for properly fabricated gates, in-channel production within the channel is a major source of dark current. In order to confirm the correctness of this model, the dark current of Al_ (0.3) Ga_ (0.7) As / GaAs n-P + heterojunction CCD array was tested in the temperature range of 23-55 ℃. A typical value at room temperature is J_D≈83PA / cm ~ 2, with some pixels having a J_D as low as 43PA / cm ~ 2. These are the lowest dark currents reported to date for CCD structures. Data at 55 ° C showed that J_D rose to ~ 1 nAl / cm ~ 2. The data further confirm the model predicts the dependence of J_D on temperature.