论文部分内容阅读
室温下在不锈钢基底上应用Ar+离子源辅助，准分子脉冲激光沉积了CeO2薄膜．研究结果表明：在合适的工艺条件下，直接在不锈钢基底上可以制备出c轴取向的CeO2薄膜，但这时的CeO2薄膜在其a－b平面内没有观察到织构的信息；进一步在相同的条件下，首先在不锈钢基底上制备一层YSZ（Yttria－StabilizedZirconia），再在YSZ／不锈钢上制备CeO2薄膜，实验结果显示出这时的CeO2薄膜不但是c轴取向，同时在其a－b平面内织构．CeO2（202）射线φ扫描图给出其全宽半峰值为20°
The Ar + ion source was used on the stainless steel substrate at room temperature, and the CeO2 thin film was excimer laser pulsed. The results show that c-axis oriented CeO2 films can be prepared directly on stainless steel substrates under the proper technological conditions. However, the texture of CeO2 films is not observed in the a-b plane at this time. , A YSZ (Yttria-Stabilized Zirconia) was prepared on a stainless steel substrate and then a CeO2 film was prepared on YSZ / stainless steel. The experimental results show that the CeO2 film is not only c-axis oriented at the same time, Plane texture. The X-ray scan of CeO2 (202) gives a full width at half maximum of 20 °