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研究了背栅效应对全平面选择离子注入自隔离ＧａＡｓ ＭＥＳＦＥＴ的阈值电压及其均匀性的影响．结果表明，背栅效应使ＧａＡｓ ＭＥＳＦＥＴ的阈值电压绝对值变小，均匀性变差．
The effect of back-gate effect on threshold voltage and uniformity of all-plane selective ion implantation self-isolated GaAs MESFETs was investigated. The results show that the back gate effect makes the absolute value of the threshold voltage of GaAs MESFET smaller and the uniformity deteriorated.