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本文首次报道成功地实现了非晶态半导体准周期(无平移对称性)超晶格结构.利用辉光放电汽相淀积技术,由两种超薄的a-Si:H层和a-SiN_x:H层按Fibonacci序列程序淀积而构成一维准周期超晶格.其中两种一维周期格子的调制波长比为黄金分割τ=(1+5~(1/2))/2.剖面电子显微像和相应的电子衍射花样揭示出这类新型非晶态半导体超晶格的奇异性质.简单的理论计算给予实验衍射图像以明确的物理解释.
This paper reports for the first time the successful realization of a quasi-periodic amorphous (non-translational symmetric) superlattice structure of amorphous semiconductors.Glow discharge vapor deposition technology consists of two ultra-thin a-Si: H layers and a-SiNx : The H layer is deposited by the Fibonacci sequence program to form a one-dimensional quasi-periodic superlattice in which the modulation wavelength ratio of two one-dimensional periodic lattices is the golden section τ = (1 + 5 ~ (1/2)) / 2. Electron microscopy and corresponding electron diffraction patterns reveal the singular properties of these novel amorphous semiconductor superlattices, and simple theoretical calculations give experimental diffraction images with a clear physical interpretation.