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瑞萨电子公司,高级半导体解决方案的主要供应商,日前宣布为其第七代具有业界领先性能的绝缘栅双极晶体管(IGBT)阵列增加13款新产品。新的IGBT包括采用650 V电压的RJH/RJP65S系列和采用1250 V电压的RJP1CS系列。新的IGBT作为功率半导体器件,用于将DC转换成AC电源的系统中,设计用于对应高电压和大电流的应用,如太阳能发电机和工业电机用功率调节器(功率转换器)。第七代技术,采用增强型薄化晶圆工艺,在传导、开关损耗以及耐受能力之间达到了低损耗平衡,以承受短路情况的发生。
Renesas Electronics, a leading supplier of advanced semiconductor solutions, today announced the addition of 13 new products to its seventh generation industry-leading insulated gate bipolar transistor (IGBT) array. The new IGBTs include the RJH / RJP65S series with 650 V and the RJP1CS series with 1250 V. The new IGBT, as a power semiconductor device, is used in systems that convert DC to AC power and are designed for applications such as high-voltage and high-current applications such as solar power generators and industrial power regulators (power converters). The seventh generation technology, using an enhanced thinned wafer process, achieves a low loss balance between conduction, switching losses, and withstand capability to withstand short circuit conditions.