This paper considers the frequency-quadrupling three-cavity gyroklystrons with successive frequency-doubling in each cavity.The cavities of 225 GHz frequency-qu
High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates effcient germanium-on-silicon p-
This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron(1.5MeV) at 360 K.Two groups of
This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755 N