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An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of In As/Al Sb HFET, in which an optimized fitting function D(ωτ_i) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect.The enhanced model with D(ωτ_i) can accurately characterize the key S parameters of In As/Al Sb HFET in a wide frequency range with a very low error function EF. It is demonstrated that the new fitting function D(ωτ_i) is helpful in further improving the modeling accuracy degree.
An enhanced small-signal model is introduced to model the influence of the impact ionization effect on the performance of In As / Al Sb HFET, in which an optimized fitting function D (ωτ_i) in the form of least square approximation is proposed in order to further enhance the accuracy in modeling the frequency dependency of the impact ionization effect. The enhanced model with D (ωτ_i) can accurately characterize the key S parameters of In As / Al Sb HFET in a wide frequency range with a very low error function EF. It is said that the new fitting function D (ωτ_i) is helpful in further improving the modeling accuracy degree.