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design principle is propose for long.P~+IN~+Ge magneto-diode with a high surface recombinationregion on one side.The optimal relation is established for design among its length l,depth d,width wand resistivity p:where ⊿T is the maximum permissible temperature rise of the chip,R_(th)the thermal resistance of theheader,I_o the forward current of the diode.
design principle is propose for long.P ~ + IN ~ + Ge magneto-diode with a high surface recombinationregion on one side. The optimal relation is established for design among its length l, depth d, width wand resistivity p: where ⊿T is the maximum permissible temperature rise of the chip, R_ (th) the thermal resistance of the header, I_o the forward current of the diode.