1.前言最近微波晶体管工艺的发展,使小信号npn双极晶体管的高频性能有了显著的提高,这些工艺的进展将在第二节描述,其中包括:1微米掩模分辨率;砷扩散射发结工艺,以及与浅结相容的低阻接触。在第3节中,对砷扩散发射结和磷扩散发射结器件进行了详细的比较。结果表明,砷扩散发射结器件的基区渡越时间要比磷扩散发射结器件小2至3倍。由于基区渡越时 1. Introduction Recent advances in microwave transistor technology have led to significant improvements in the high frequency performance of small signal npn bipolar transistors. The progress of these processes will be described in Section 2, which includes: 1 micron mask resolution; arsenic diffusion Shoot hair knot technology, and with low-touch compatible with low resistance. In Section 3, a detailed comparison of arsenic diffusion-emitting junction and phosphorus-diffused emitter junction devices was performed. The results show that the basal transit time of arsenic diffusive emissive junction devices is 2 to 3 times smaller than that of a phosphorus diffusive emissive junction device. As the base transit time