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采用1.319μm和1.064μm连续激光辐照硅基CCD,分析了红外激光入射引起的热效应导致的CCD材料的温度分布。计算结果表明随着温度的升高,暗电流不断增大,当温度超过340K时,增大速度显著上升,暗电流噪声增大到可与串音阈值比拟。建立了不同功率密度激光入射CCD时探测响应模型,比较理想情况和热效应影响下探测响应模拟图。结果表明:由于激光辐照热效应引起的温度升高,进而引起暗电流噪声增大,严重影响CCD的成像效果。
The silicon-based CCDs were irradiated by continuous laser of 1.319μm and 1.064μm, and the temperature distribution of CCD material caused by the thermal effect caused by infrared laser incident was analyzed. The calculated results show that with the increase of temperature, the dark current increases. When the temperature exceeds 340K, the increase speed increases significantly, and the dark current noise increases to match the crosstalk threshold. The detection response model of CCD with different power density laser incidence was established, and the simulation map of detection response under the ideal situation and thermal effect was established. The results show that due to the temperature rise caused by the laser radiation thermal effect, the dark current noise is increased and the CCD imaging performance is seriously affected.