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This paper presents a high-gain wideband low-noise IF amplifier aimed for the ALMA front end system using 90-nm LP CMOS technology.A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain.Incorporating an input inductor and a gate-inductive gain-peaking inductor,the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure.The circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB.Under 1.2 V supply voltage,the proposed IF amplifier consumes 42 mW DC power.The chip die including pads takes up 0.53 mm~2,while the active area is only 0.022 mm~2.
This paper presents a high-gain wideband low-noise IF amplifier aimed at the ALMA front end system using 90-nm LP CMOS technology. A topology of three optimized cascading stages is proposed to achieve a flat and wideband gain. Correct an input inductor and a gate-inductive gain-peaking inductor, the active shunt feedback technique is employed to extend the matching bandwidth and optimize the noise figure. the circuit achieves a flat gain of 30.5 dB with 3 dB bandwidth of 1-16 GHz and a minimum noise figure of 3.76 dB.Under 1.2 V supply voltage, the proposed IF amplifier consumes 42 mW DC power. The chip die including pads takes up 0.53 mm ~ 2 while the active area is only 0.022 mm ~ 2.