高可靠砷化镓功率场效应晶体管系列南京电子器件研究所已研制出适用于卫星通信及微波系统的高可靠砷化镓功率场效应晶体管系列。它采用器件标准设计、全离子注入、干法刻蚀等高可靠５０ｍｍＧａＡｓ工艺技术，具有参数均匀、成品率高、一致性好等特点。器件在８ＧＨＺ下测... High reliability gallium arsenide power field effect transistor series Nanjing Institute of Electronic Devices has developed a series of high reliability gallium arsenide power field effect transistors for satellite communications and microwave systems. It uses the device standard design, all ion implantation, dry etching and other high-reliability 50mmGaAs process technology, with uniform parameters, high yield, good consistency and so on. Device measured under 8GHZ ...