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霍尔元件是利用Ⅲ-Ⅴ族化合物半导体砷化铟单晶材料制成的。元件制作工艺采用了真空蒸镀、真空合金电极及良好的导热封装。元件具有内阻小、功耗小、输出功率大、控制电流大、噪声系数小、零漂小、良好的温度特性和结构牢固等特点。目前已被应用于测量磁场、测量超低温下的磁场,以及在功率计、电流计和转速计中得到应用。本文着重介绍我所研制的霍尔元件的制作工艺及其特性。
Hall element is the use of III-V compound semiconductor indium arsenide single crystal material. Components used in the production process of vacuum evaporation, vacuum alloy electrodes and good thermal conductivity package. Components with small internal resistance, low power consumption, output power, control current, noise figure is small, drift is small, good temperature characteristics and structural stability and so on. Has been applied to measure the magnetic field, measuring the magnetic field at ultra-low temperatures, as well as in power meters, ammeter and tachometer applications. This article focuses on the manufacturing process and characteristics of the Hall element that I developed.