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联栅晶体管(简称GAT)是具有高速高反压低饱和压降性能的功率开关器件,它是一种双极型晶体管的改进型结构。它有一个特殊的基区,基区一部分做得较深,其杂质浓度较其他部分为高。这一基区中伸出部分相当于JFET的栅,接近基区的集电区相当于源,远离基区的那部分集电区相当于漏,两栅之间的集电区作为沟道,基区其他部分作为普通NPN晶体管的基区作用。联栅晶体管克服了高反压与高频之间的矛盾,同时使得在较低的电阻率情况下得到较高的BV_(ceo)。
Gate-Transistor (GAT) is a high-speed, high back pressure, low saturation voltage drop power switching device that is an improved bipolar transistor structure. It has a special base area, the base area is partially deep, its impurity concentration is higher than the other parts. In this base region, the extended portion corresponds to the gate of the JFET. The collector region close to the base region corresponds to the source. The collector region away from the base region corresponds to a drain. The collector region between the two gates serves as a channel, The rest of the base area functions as a base for ordinary NPN transistors. The gated transistor overcomes the contradiction between high backpressure and high frequency while allowing for higher BV ceo at lower resistivity.