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提出了一种基于靶台(工件)二次加速的束线离子注入的新方法,基本原理是将传统束线离子注入和等离子体离子注入有效复合。采用二维Particle-in-cell(PIC)模型对这种注入方法进行了数值仿真研究。考察了靶台加负偏压情况下靶台表面空间电势、离子密度变化以及离子的运动状态的时空演化。统计分析了不同时刻离子注入剂量、注入能量和注入角度的分布规律。结果表明:靶台施加偏压对束流离子起到了很好的二次加速效果,束线离子复合加速离子注入这种新方法理论上是切实可行的。同时发现在靶台附近空间电场的作用下,离子束会发生小角度偏转,由柱状形逐渐变成“喇叭口”形,靶台表面有效注入范围扩大。靶台表面注入剂量分布呈中心区域高边缘区域低的趋势。这种新方法有助于减缓电源硬件加工的难度,增加了工艺的灵活性。
A new method of beam ion implantation based on the second acceleration of the target (workpiece) is proposed. The basic principle is that the traditional beam ion implantation and plasma ion implantation are effectively combined. The injection method was simulated by two-dimensional Particle-in-cell (PIC) model. The temporal and spatial evolution of the target surface space potential, the ion density and the ion movement state are investigated under negative bias of the target. The distribution of ion implantation dose, implantation energy and implantation angle were statistically analyzed. The results show that the bias applied by the target has a good secondary accelerating effect on beam current, and the new method of beam ion-assisted accelerated ion implantation is theoretically feasible. At the same time, it is found that the ion beam will be deflected at a small angle by the electric field in the space near the target platform, and gradually become a “bellmouth” shape from the columnar shape. The effective injection range of the target platform expands. The dose distribution on the target surface tends to be low at the center of the high-edge region. This new approach helps to ease power hardware processing challenges and adds process flexibility.