提出用存贮电荷模型来估算I~2L门延迟。可推算出的结果比较容易在实验中获得。这这个模型不仅为器件的工作提供物理学的解释,而且成了器件和工艺设计最佳化的有效工具。 Proposed storage charge model to estimate I ~ 2L gate delay. The results that can be calculated are relatively easy to obtain in the experiment. This model not only provides a physics explanation for the operation of the device, but also becomes an effective tool for optimizing the device and process design.