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用三种钯源对p~+nn~+和n~+pp~+硅二极管进行了扩散掺杂,井用深能级电容瞬态谱仪(DLTS)对它们作了测量.在适当的工艺条件下,在各类样品中均观察到能量为E_c-0.37eV和E_c-0.62eV两个浓度居统治地位的新的电子陷阱能级.从实验上证明了以上两个能级确是由进入硅点阵中的钯杂质所引起,并确定了它们和文献报道过的Si:Pd 能级间的相互转化关系.由这些能级的产生条件,退火特性以及电学测量结果来看,这两个新能级应分别与硅中间隙钯所引起的两种不同荷电态的施主中心相对应.
The p ~ + nn ~ + and n ~ + pp ~ + silicon diodes were diffusion-doped with three palladium sources and measured with a deep level capacitive transient spectrometer (DLTS). In the appropriate process Under these conditions, new electron trap levels with dominant concentrations of E_c-0.37eV and E_c-0.62eV were observed in all kinds of samples.It has been experimentally proved that the above two energy levels are indeed determined by the entering Which is caused by the palladium impurities in the silicon lattice and confirms their interconversion relationship with the reported Si: Pd energy levels.According to the production conditions of these energy levels, the annealing characteristics and the electrical measurement results, these two The new energy level should correspond to two different charge state donor centers caused by interstitial palladium in silicon, respectively.