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按本文所述的方法可以生产供硅外延使用的高纯SiCl_4,其化学纯度可达8个“9”以上;生产不掺杂n/n~+硅外延层(厚度为40～50微米)的电阻率在100欧姆-厘米以上。最高可达300欧姆-厘米;生产不掺杂n/n~-硅外延层(厚度500～1500微米)的电阻率在300欧姆-厘米以上,最高可达700欧姆-厘米,其平均霍耳迁移率为1735厘米~2/伏·秒,接近本征硅的霍耳迁移率(～1900厘米~2/伏·秒)
According to the method described herein, high purity SiCl 4 for epitaxial silicon can be produced with a chemical purity of up to eight “9” or more; and a method of producing an undoped n / n ~ + silicon epitaxial layer (40-50 μm in thickness) Resistivity in the 100 ohm - cm above. Up to 300 ohm-cm; the resistivity of the undoped n / n ~ -silicon epitaxial layer (500-1500 μm in thickness) is above 300 ohm-cm and up to 700 ohm-cm with an average Hall-Migration The rate is 1735 cm 2 / V · sec, which is close to that of intrinsic silicon (~ 1900 cm -2 / V · sec)