向硅中进行杂质扩散,除了采用液态或气态杂质源外,还可以采用固体片状杂质源。已经证明,采用片状氮化硼能够进行稳定的B扩散(特别是大面积Si片,效果更为显著)。 我们以前曾经报道过采用片状氮化磷进行磷扩散的方法。本文再报道一种较稳定的扩散方法,采用含P_2O_5的片状扩散材料做为扩散源。 Impurity diffusion into the silicon, in addition to the use of liquid or gaseous impurity sources, but also can be used solid flake impurities source. It has been shown that the use of flake boron nitride enables stable B diffusion (especially for large area Si flakes, the effect is more pronounced). We have previously reported on the use of flake phosphorus nitride for phosphorus diffusion method. This article reports a more stable diffusion method, using P_2O_5-containing sheet-like diffusion material as a diffusion source.