The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm×48 mm active area.The leakage current under the full depletion bias voltage of-16 V is about 2.5 n A, and the rise time is better than160 ns. The energy resolution for a 5.157 Me V α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region.Such an event is only about 0.6% of all events and can be neglected in an actual application. The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gain its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm × 48 mm active area. The leakage current under the full depletion bias voltage of -16 V is about 2.5 n A, and the rise time is better than160 ns. The energy resolution for a 5.157 Me V α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region. An event is only about 0.6% of all events and can be neglected in an actual application.