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采用脉冲激光沉积(PLD)方法在Si及SiC基底上制备了相同厚度的GaN纳米薄膜并对其进行了微结构表征及场发射性能测试分析.结果表明:基底对于GaN薄膜微结构及场发射性能具有显著的影响.在SiC基底上所制备的GaN纳米薄膜相对于Si基底上的GaN纳米薄膜,其场发射性能得到显著提升,其场发射电流可以数量级增大.场发射显著增强应源于纳米晶微结构及取向极化诱导增强效应.本研究结果表明,要获得优异性能场发射薄膜,合适基底及薄膜晶体微结构需要重点考虑.
GaN thin films with the same thickness were fabricated on Si and SiC substrates by pulsed laser deposition (PLD) method and their microstructures and field emission properties were tested. The results show that the microstructure and field emission properties Has a significant impact on the GaN substrate prepared on SiC substrate GaN nanostructured film on the Si substrate, its field emission performance has been significantly improved, the field emission current can be an order of magnitude increase in field emission significantly enhanced due to the nano Crystal microstructure and oriented polarization induced enhancement effect.The results show that to obtain excellent performance field emission film, suitable substrate and thin film crystal microstructure need to be considered.