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用AES详细观测了化学生成Si/S_1O_2系统在超高真空(UHV)中的退火变化.并对收录的俄歇直接谱进行了快速傅里叶变换(FET)退自卷积处理,得到了Si态密度退火前后的变化情况.最后,对退火效应进行了分析和讨论.
The annealing changes of chemical-generated Si / S 1 O 2 system in ultra-high vacuum (UHV) were systematically observed by using AES, and the fast Fourier transform (FET) deconvolution was performed on the recorded Auger direct spectra. Si State density before and after annealing changes.Finally, the annealing effect is analyzed and discussed.