论文部分内容阅读
用等离子冷放电化学气相法（PCVD）合成的高纯、超细的无定形Si3N4粉末，储放了不同时间和在红外灯下烘烤短时间后，进行红外光谱的测定．发现合成的粉末刚暴露于空气中就产生了氧化，而后随着储放时问的延长，表面氧化愈来愈严重，Si－O键的吸收峰强度明显增强，而Si－N－Si键，Si-H键的吸收峰则愈来愈弱，直至仅有极小的吸收．而用低温PCVD法合成的无定形薄膜的特征吸收峰宽且强，与刚合成的粉末的红外谱有许多相同之处，但峰的形状，强度不随时间的变化而变化．
High purity, ultrafine amorphous Si3N4 powder synthesized by plasma cold discharge chemical vapor deposition (PCVD) was used to measure infrared spectra after being stored for different time and baking under infrared lamp for a short time. It was found that the synthesized powders were oxidized just after being exposed to the air, and then the surface oxidation became more and more serious with the prolongation of storage time. The Si-O bond absorption peak intensity was significantly enhanced. However, Si-N-Si bonds, The absorption peak of the Si-H bond is getting weaker until it has only minimal absorption. However, amorphous films synthesized by low temperature PCVD have broad absorption peaks and strong absorption peaks, which have many similarities with the infrared spectra of freshly synthesized powders. However, the shape and intensity of peaks do not change with time.