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AlN陶瓷中成分与杂质对于AlN的性能具有决定性作用。用二次离子质谱（SIMS）和X射线衍射（XRD）对清华大学材料系电子封装用的AlN陶瓷进行了研究。SIMS谱表明AlN衬底中除Al,N以外还有C，O，Si，Ca，Y等元素，其中有些是表面污染。衬底的SIMS深度分析表明样品O，Ca，Y信号都很强，且分布均匀，说明样品中含有Y2O3，CaO添加剂。AlN样品的XRD谱与AlN的JCPDS卡片对照，在测量范围内卡片上所有峰均出现，且晶面间距符合很好。在XRD谱上找到了与Y2O3和CaO对应的衍射峰。
AlN ceramic composition and impurities for the performance of AlN decisive role. The use of SIMS and XRD to study the electronic packaging of AlN ceramics in Tsinghua University was studied. The SIMS spectrum shows that there are C, O, Si, Ca, Y and other elements besides Al and N in AlN substrate, some of them are surface contamination. SIMS depth analysis of the substrate showed that the samples O, Ca, Y signals are very strong, and the distribution is uniform, indicating that the sample contains Y2O3, CaO additives. The XRD spectra of AlN samples were compared with those of AlN JCPDS cards. All peaks in the card appeared within the measurement range, and the interplanar spacing was in good agreement. The diffraction peaks corresponding to Y2O3 and CaO were found on the XRD spectrum.