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讨论了相移掩模提高光刻分辨力的基本原理 ,提出了一种抗蚀剂相移器制作衰减相移掩模的新方法 ,利用自行设计、建立的 Kr F准分子激光投影光刻实验曝光系统进行了实验研究 ,给出了实验结果 ,并与传统光刻方法作了比较。
The basic principle of phase-shift mask to improve lithographic resolution is discussed. A new method of making phase-shift mask by using phase-shift mask is proposed. By using KrF excimer laser projection lithography The experiment of exposure system was carried out, the experimental results were given and compared with the traditional lithography method.