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报道了1.06μm增益开关半导体激光器的详细特性分析和功率放大研究。用高频正弦信号调制中心波长1.06μm的F-P腔半导体激光器得到脉宽约为100 ps、平均功率约为20 m W,重频从500 MHz到2 GHz连续可调的稳定短脉冲激光输出。采用注入锁定改善增益开关半导体激光器的输出特性。研究和分析了调制信号的频率、功率和偏置电流的大小以及注入锁定的功率、温度对激光器输出特性的影响。将该激光器作为种子,用108 W的抽运光进行两级全光纤功率放大得到了82 W的高功率输出,光光转换效率达到76%。
The detailed characteristics analysis and power amplification of 1.06μm gain switched semiconductor laser are reported. A stable short-pulse laser output with pulse width of 100 ps, average power of about 20 mW and repetition frequency from 500 MHz to 2 GHz was obtained by high-frequency sinusoidal modulation of a F-P cavity semiconductor laser with a center wavelength of 1.06 μm. IMPROVED OUTPUT CHARACTERISTICS OF GAIN SWITCHED SEMICONDUCTOR LASER WITH INJECTION LOCK. The effects of modulation frequency, power and bias current, injection-locked power and temperature on laser output characteristics were studied and analyzed. Using the laser as a seed, two-stage full-fiber power amplification with 108 W of pump light resulted in a high-power output of 82 W with a light-to-light conversion efficiency of 76%.