电子工业正在迅速发展的今天,要求集成电路向高速度、高集成度、高可靠性、低成本和低功率消耗方向发展。因此对半导体材料和器件生产提出了更高的要求,如提高微细加工,薄层外延,低温浅结掺杂等工艺水平。微波二极管,晶体管和太阳能电池也要求突变结掺杂及低温浅结扩散技术。为了提高产品的成品率和可靠性,就要求减少或者消除工艺过程中引起新的缺陷。目前在半导体器件生产以热退火的工艺中,还不能完全解决上面提出的高 The electronics industry is rapidly developing today, requiring integrated circuits to high-speed, highly integrated, high reliability, low cost and low power consumption direction. Therefore, semiconductor materials and device manufacturing put forward higher requirements, such as improving the micro-processing, thin-layer epitaxy, low-temperature shallow doping and other technology levels. Microwave diodes, transistors and solar cells also require abrupt junction doping and low temperature shallow junction diffusion techniques. In order to improve product yield and reliability, it is required to reduce or eliminate new defects in the process. Currently in the semiconductor device to produce thermal annealing process, can not completely solve the above-mentioned high