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利用脉冲激光沉积的方法制备掺铒Si/Al2O3多层结构薄膜,获得了由纳米结构的Si作为感光剂增强的Er3+在1.54μm高效发光.利用拉曼散射、高分辨透射电镜和光致发光测量研究了在不同退火温度下(600—1000℃)纳米结构Si层的结晶形态变化,及对Er3+在1.54μm的发光的影响特征.研究发现最佳发光是在退火温度600—700℃.在这个条件下纳米Si的尺寸和密度,Si和Er的作用距离以及Er3+发光的化学环境得到了优化.进一步,光致发光瞬态衰减谱研究表明,当纳米Si尺寸小时,衰减遵循单指数模式(慢过程),当纳米Si尺寸大时,衰减遵循双指数模式(快过程和慢过程),其中衰减中快过程来自类体Si的对激发态Er3+去激发过程,慢过程对应典型的纳米Si体系衰减过程.
The erbium-doped Si / Al2O3 multi-layer thin films were prepared by pulsed laser deposition, and the Er3 + -doped luminescence with nanostructured Si as sensitizer was efficiently luminescent at 1.54μm.The Raman scattering, high resolution transmission electron microscopy and photoluminescence The crystal morphologies of Si layer with different annealing temperatures (600-1000 ℃) and the effect of Er3 + emission at 1.54μm were studied.The optimum luminescence was found to be at annealing temperature of 600-700 ℃ .In this condition The size and density of the underlying nano-Si, the distance of Si and Er and the chemical environment of Er3 + emission were optimized.Furthermore, photoluminescence transient attenuation spectroscopy studies show that when the size of nano-Si is small, the attenuation follows single exponential mode ). When the size of nano-Si is large, the attenuation follows the double exponential model (fast process and slow process), in which the fast process of decay comes from the quasi-excited state Er3 + de-excitation of quasi-Si and the slow process corresponds to the typical nano-Si system decay process .