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共源极电感同时存在于功率MOSFET的功率回路和门极驱动回路中,影响器件的开关特性和开关损耗。共源极电感的影响将随着器件开关速度和开关频率的提高而显得更为严重。碳化硅(SiC)MOSFET相对于硅器件的材料优势使其可以实现更快速的开关过程,共源极电感的影响更加需要考虑。首先分析了现有功率开关损耗测量方法的优劣,然后选用一种通过测量结温升和热阻的方法来测量SiC MOSFET的开关损耗,最后搭建了一台输出功率1kW、输出电压800V的全碳化硅Boost样机,从100kHz到500kHz进行实验验证。实验结果表明,当不含共源极电感时SiC MOSFET的开通损耗、关断损耗均有所减小。
Common source inductance exists in the power MOSFET power gate and gate drive circuit, affecting the switching characteristics of the device and switching losses. The effect of common-source inductance will be more severe as the device switching speed and switching frequency increase. The material advantages of silicon carbide (SiC) MOSFETs relative to silicon devices make it possible to achieve faster switching processes, and the effect of common-source inductors is even more relevant. First of all, the advantages and disadvantages of the existing measurement methods of power switching loss are analyzed. Then, a method of measuring junction temperature rise and thermal resistance is adopted to measure the switching loss of SiC MOSFET. Finally, a full-scale output power of 1kW and an output voltage of 800V Silicon carbide Boost prototype, from 100kHz to 500kHz experimental verification. The experimental results show that the turn-on loss and turn-off loss of the SiC MOSFET are reduced when the common-source inductor is not included.