论文部分内容阅读
1985～1986年主要厂家将制作出1M位动态RAM样品。目前,各公司正在抓紧进行方案拟定、设计以及制造技术的研究工作。品种确实增加了。增加了×4结构的比重。规定了一套封装的标准。使用的技术与目前各公司制作256k的技术相同。最初使用的技术是从256k的技术基础上发展而来的。引人注目的存储单元结构中除一部分外,是以往通用的平面型结构。这种结构的芯片面积是60～65mm~2。为了使面积进一步缩小,采用开槽型或堆栈型(积未型)结构。前一种缩小面积的结构可以在1M以下时使用。设计规范大致是1.2μm。有的厂家兼用nMOS和CMOS工艺,有的厂家集中使用CMOS工艺。
1985-1986 major manufacturers will produce 1M dynamic RAM samples. At present, companies are stepping up their research on programming, design and manufacturing technology. Variety really increased. Increased the proportion of × 4 structure. Set a standard package. The technology used is the same as the 256k technology currently used in various companies. The original technology was developed from the 256k technology. With the exception of some of the striking memory cell structures, it is a conventional planar structure. The chip area of this structure is 60 ~ 65mm ~ 2. In order to further reduce the area, the use of slotted or stacked (product type) structure. The former reduced area structure can be used below 1M. The design specification is roughly 1.2μm. Some manufacturers use both nMOS and CMOS technology, and some manufacturers focus on the use of CMOS technology.