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本文用透射电镜的衍射方法，研究Ｃｏ薄膜和衬底之间的界面的低温相变．用小角解理方法制备的室温原始样品经分析发现：室温下薄膜没有相变．在２５０℃，Ｃｏ２Ｓｉ为最先形成的硅化物；２５０℃３０分钟处理后，产生大量的ＣｏＳｉ相．４５０℃１小时处理形成单相的ＣｏＳｉ．从本实验结果与前人研究结果对比发现：观察手段、样品制备方法、镀膜方法等因素会影响低温相变结果．
In this paper, the low temperature transformation at the interface between the Co thin film and the substrate is studied by the diffraction method of transmission electron microscope. The original sample prepared at room temperature by small angle cleavage method was analyzed and found that there was no phase change at room temperature. At 250 ℃, Co2Si is the first silicide to be formed. After 250 ℃ for 30 minutes, a large amount of CoSi phase is produced. 450 ° C for 1 hour to form single-phase CoSi. From the results of this experiment and previous studies, it is found that the observation methods, sample preparation methods, coating methods and other factors will affect the low temperature transformation results.