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The characteristics of the electricity aad optics have been studied for the polyacenic semiconductor material prepared by pyrolysis of phenolfor-maldehyde resin in this paper. The experimental results indicate that the electrical conductivity of polyacenic material increasses with a rise in pyrolytic temperature(Tp). The sample prepared at 7p=600℃ demonstrated that behavior governed by three-dimension sional-range-hopping (3D-VRH) mechanism at a temperature range of 77-100K. Both 0.052eV and 0.074eV acceptor energy levels (or energy bands) exist in this sample. Raman spectrum demonstrates the increasing of graphitization structure aromatic rings with the rise in pyrolytic temperature, which would increase electrical conductivity. PL spectrum indicates that the pristine polyacenic material can not become a narrow-gap semiconductor even if the electrical conductivity of sample is larger than 101 S·cm-1.
The characteristics of the electricity aad optics have been studied for the polyacenic semiconductor material prepared by pyrolysis of phenolfor-maldehyde resin in this paper. The experimental results that that electrical conductivity of polyacenic material increasses with a rise in pyrolytic temperature (Tp). The sample prepared at 7p = 600 ° C demonstrates that behavior governed by three-dimension sional-range-hopping (3D-VRH) mechanism at a temperature range of 77-100K. Both 0.052eV and 0.074eV acceptor energy levels (or energy bands) exist in this sample. Raman spectrum demonstrates the increasing graphitization structure of aromatic rings with the rise in pyrolytic temperature, which would increase electrical conductivity. PL spectrum indicates that the pristine polyacenic material can not become a narrow-gap semiconductor even if the electrical conductivity of sample is larger than 101 S · cm-1.