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设计了一种将 β FeSi2 颗粒埋入非故意掺杂Si中的Sip π n二极管来确定 β FeSi2 Si异质结的能隙差 .当二极管处于正向偏置时 ,通过Sin p-结注入的电子扩散到 β FeSi2 并由于Si与 β FeSi2 之间的能隙差而受到限制 ,电荷在异质结的积累反过来阻挡了电子的继续扩散 ,将电子局域化在靠近Sin p-结的 p- Si区 .少子的局域化减少了非辐射复合的途径 ,Si和β FeSi2 的发光增强 ,淬灭速率变慢 ,在室温低电流下仍可得到Si和 β FeSi2 电致发光 .Si和 β FeSi2 发光强度的比率对温度的依存性表明同型异质结对电子限制能力的减弱符合热发射模型 ,由此确定出Si和 β FeSi2 异质结导带带阶差为 0 2eV .
A Sip π n diode with β FeSi2 particles embedded in unintentionally doped Si was designed to determine the energy gap of the β FeSi2 Si heterojunction. When the diode is forward biased, The electrons diffuse to β FeSi2 and are limited due to the difference in energy gap between Si and β FeSi2. The accumulation of charges in the heterojunction, in turn, blocks the continued diffusion of electrons and localizes the electrons to the p - Si region. The localization of minority moieties reduces the non-radiative recombination pathway, the luminescence of Si and β FeSi2 is enhanced and the quenching rate is slow, Si and β FeSi2 electroluminescence can still be obtained at low current at room temperature. The dependence of the luminescence intensity ratio of FeSi2 on temperature shows that the reduction of the electron confinement abilities of the heterojunction couples with the thermal emission model and thus the step difference between Si and β FeSi2 heterojunction conduction bands is determined to be 0 2eV.