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分析了禁带变窄效应和少子陷阱效应对低温双极晶体管正向渡越时间的影响,在此基础上,建立了综合两种效应的正向渡越时间模型,理论计算结果与实测值一致。
The influence of the forbidden band narrowing effect and the minority carrier trap effect on the positive transit time of the low temperature bipolar transistor is analyzed. Based on this, a forward transit time model combining the two effects is established, and the theoretical calculation results are consistent with the measured values .