通过电化学沉积及退火处理制得NiO纳米线,并制备出了NiO纳米线阵列紫外光电导探测器。扫描电子显微镜测试发现制备出的纳米线非常均匀,长度约为50μm。X射线衍射测试表明氧化退火后形成的NiO是多晶立方相结构;同时,Ni纳米线并没有被完全氧化,而是形成了一个NiO/Ni壳层结构。在外加1 V偏压下,暗电流为0.92μA,光电流为19.1μA,光电流约是暗电流的20倍;在0.3 mA偏流下,探测器的暗电压约为紫外光照下光电压的2.5倍,响应时间为1.6 s,延迟时间为6 s。探测器光暗电压差在0~1.1 W/cm2光照强度范围内是线性变化的,响应度为6.4 V/W。同时,探讨了NiO/Ni壳层纳米线阵列的光电效应工作机理。 NiO nanowires were prepared by electrochemical deposition and annealing, and NiO nanowire array UV photoconductivity detector was fabricated. Scanning electron microscopy showed that the prepared nanowires were very uniform and had a length of about 50 μm. X-ray diffraction tests show that the NiO formed after the oxidative annealing is a polycrystalline cubic phase structure; at the same time, the Ni nanowires are not completely oxidized, but form a NiO / Ni shell structure. Under the bias voltage of 1 V, the dark current is 0.92 μA, the photocurrent is 19.1 μA, and the photocurrent is about 20 times of the dark current. At 0.3 mA bias current, the dark voltage of the detector is about 2.5 under the UV light voltage Times, response time 1.6 s, delay time 6 s. The detector light-dark voltage difference linearly varies from 0 to 1.1 W / cm2 with a response of 6.4 V / W. At the same time, the photoelectric mechanism of NiO / Ni shell nanowire arrays was discussed.