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采用ZrO2、WO3复合氧化物和Cu靶材,利用磁控溅射法,通过改变溅射功率在单晶硅基片上分别制备1、3、5层Cu/ZrW2O8复合薄膜。通过X射线衍射、扫描电镜和原子力显微镜表征不同层薄膜的物相组成和表面形貌;采用划痕仪和应力测试仪分别测量薄膜的结合力和热应力。结果表明:未退火处理的薄膜为非晶态钨酸锆和铜的复合薄膜;在Ar2气氛中750℃退火处理3 min后的薄膜结晶度良好;5层膜中首次出现棒状ZrW2O8晶粒,且5层膜的表面和三维形貌最佳,膜基结合力最大,缓和热应力效果最好。
ZrO2, WO3 composite oxide and Cu target were prepared by magnetron sputtering, by changing the sputtering power on the single crystal silicon substrate were prepared 1, 3, 5 layer Cu / ZrW2O8 composite film. The phase composition and surface morphology of the films were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscopy. The cohesion and thermal stress were measured by scratch tester and stress tester respectively. The results show that the un-annealed films are amorphous zirconium tungstate and copper composite films. The film crystallinity is good after being annealed at 750 ℃ for 3 min in Ar2 atmosphere. For the first time, rod-like ZrW2O8 grains appear in the five-layer films 5-layer film surface and the best three-dimensional morphology, film-based maximum adhesion, easing the best thermal stress.