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随着材料质量的不断改进,最近研制出一种特别适合于集成光电子学的廉价衬底。众所周知,GaAs和Si相比,前者的光学和速度特性都优于后者,但它的热性能、绝缘性能及脆性都不如硅好。这种新研制的Si上GaAs则是集这种材料的特性于一体,深受广大制造者和用户的青睐。本文就目前世界上对Si上GaAs的研制工作作了概述,并对目前存在的工艺问题如晶格失配及减小位错密度的问题进行了讨论。实验证明采用MBE和MOCVD在Si上直接制作GaAs,其工艺简单,生长效果好。目前在Si(100)上制作的GaAs,其位错密度只有10~6/cm~2(要求值为10~4/cm~2)。预计Si上GaAs将是未来GaAs市场上的佼佼者。
With the continuous improvement of the quality of materials, a cheap substrate that is particularly suitable for integrated optoelectronics has recently been developed. As we all know, GaAs and Si compared to the former optical and speed characteristics are superior to the latter, but its thermal properties, insulation and brittleness are not as good as silicon. The newly developed Si on GaAs is the set of characteristics of this material in one, by the majority of manufacturers and users of all ages. In this paper, the current development of Si on the GaAs made a summary of the work, and the existing problems such as lattice mismatch and reduce the dislocation density are discussed. Experiments show that the use of MBE and MOCVD in the direct production of GaAs on Si, the process is simple, good growth effect. The current dislocation density of GaAs fabricated on Si (100) is only 10 ~ 6 / cm ~ 2 (the required value is 10 ~ 4 / cm ~ 2). GaAs on Si is expected to be the market leader in the future GaAs.