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用光致荧光方法加选择腐蚀技术研究了MBE GaAs/AlGaAs多量子阱中的非本征发光,对3种非本征峰分别指派为束缚激子、阱边界受主态和集聚在最初生长阱里的阱中心受主态发光。
The extrinsic luminescence in MBE GaAs / AlGaAs MQWs has been studied by photofluorometry and selective etching techniques. The three extrinsic peaks are assigned as bound excitons respectively. The boundary of the well is dominated by the host and accumulated in the initial growth well The trap center in the main state of light.