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Fin FET器件比主流CMOS技术表现出更多优势,如快速、高集成度、低功耗、多功能性和强扩展性,基于ISE TCAD,考虑迁移率、量子效应、载流子重组、辐射效应等的影响,建立了一种纳米Fin FET器件SEE的3D仿真模型。分析了工艺掺杂浓度、栅压、粒子能量、寄生电容及技术节点等对单粒子瞬态电流的影响,并探讨了其影响机制。基于此分析,找到了一些潜在的工艺加固技术,如降低源极掺杂浓度、增加漏极和衬底的掺杂浓度、减少粒子能量、降低栅压、优化寄生电容等。
Fin FET devices show more advantages than mainstream CMOS technologies such as fast, highly integrated, low power, versatility and scalability, based on the ISE TCAD, considering mobility, quantum effects, carrier recombination, radiation effects Etc., a 3D simulation model of SEE for FinFET devices was established. The influence of process doping concentration, gate voltage, particle energy, parasitic capacitance and technology node on the single-particle transient current is analyzed and its influence mechanism is discussed. Based on this analysis, some potential technology reinforcement technologies have been found, such as reducing the source doping concentration, increasing the doping concentration of the drain and the substrate, reducing the energy of the particles, lowering the gate voltage and optimizing the parasitic capacitance.