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研究了氮离子注入对立方氮化硼（ｃ－ ＢＮ） 膜，富硼的硼氮膜（ＢＮ０ ．５ ） 和硼膜（Ｂ） 的成分及结构的影响． 用活性反应离子镀技术在单晶硅基体上沉积ｃＢＮ、ＢＮ０ ．５ 和Ｂ 膜；然后使用等离子基离子注入（ＰＢＩＩ） 技术，在５０ ｋＶ 的基体脉冲负偏压下注入氮． 用ＦＴＩＲ 透射谱分析膜在氮离子注入前后结构的变化，用ＸＰＳ分析膜的成分分布． 结果表明：在ｃ－ ＢＮ 膜中注入氮离子几乎不改变膜的ＮＢ，但膜中ｃ－ ＢＮ 的含量略有增加；对于ＢＮ０ ．５ 膜，注入氮后，ＮＢ 略有提高，膜的ａ－ ＢＮ 的结晶化提高；而在硼膜中注入氮后，氮在膜中呈类似高斯分布，最高氮浓度ｒ（Ｎ）达２３ ％ ，膜中形成了非晶态的氮化硼（ａ－ ＢＮ） 结构． 此外，在以上各种膜上注入氮后，膜基界面都有不同程度的成分混合．
The effect of nitrogen ion implantation on the composition and structure of cubic boron nitride (c-BN) film, boron-rich boron nitride film (BN0.5) and boron film (B) was studied. Activated reactive ion plating technology is used to deposit cBN and BN0 on monocrystalline silicon substrate. 5 and B films; then plasma was implanted using a plasma-based ion implantation (PBII) technique at a base-pulse negative bias of 50 kV. The changes of the structure of the membrane before and after nitrogen ion implantation were analyzed by FTIR transmission spectrum, and the compositional distribution of the membrane was analyzed by XPS. The results show that the nitrogen ion in the c-BN film almost does not change the NB of the film, but the content of c-BN in the film slightly increases; for BN0. 5 membrane, NB increased slightly and the crystallinity of a-BN increased. When nitrogen was injected into the membrane, nitrogen showed a Gaussian distribution in the membrane with the highest nitrogen concentration of r (N) up to 23%, the film formed amorphous boron nitride (a-BN) structure. In addition, after all the above films were infiltrated with nitrogen, the film-based interfaces had different degrees of compositional mixing.