论文部分内容阅读
由于硫元素与氧元素化学特性相近,利用硫在Ni基带表面形成的c(2×2)-S超结构可以有效地控制氧化物缓冲层在Ni基带表面的织构.本研究提出将单质硫在120℃下挥发,利用单质硫在基带表面的吸附与脱附形成有序c(2×2)-S超结构的新技术路线.X光电子能谱(XPS)结果显示,采用新技术处理的金属基带表面有明显的硫元素,基带表面Ni和S的原子比例符合c(2×2)结构中S的覆盖度,即0.5的要求.在经过硫化处理后的NiW基带表面制备缓冲层,结果显示,新硫化处理技术改善了NiW基带表面的物理化学特性,有利于氧化物缓冲层的外延生长.
Due to the similar chemical characteristics of sulfur and oxygen, the texture of oxide buffer layer on the surface of Ni substrate can be effectively controlled by the c (2 × 2) -S superstructure formed by sulfur on the surface of Ni substrate. And evaporated at 120 ℃ to form ordered c (2 × 2) -S-superstructure using adsorption and desorption of elemental sulfur on the surface of the substrate.The results of X-ray photoelectron spectroscopy (XPS) The surface of the metal substrate has obvious sulfur element, and the atomic ratio of Ni and S on the surface of the substrate conforms to the coverage of S in c (2 × 2) structure, that is, the requirement of 0.5.A buffer layer is prepared on the surface of the vulcanized NiW substrate, Shows that the new vulcanization technology improves the physicochemical properties of the NiW substrate surface and facilitates the epitaxial growth of the oxide buffer layer.