由于位错对砷化镓单晶的性质有害,因此对某些器件制作(尤其耿二极管制作)工艺过程在材料中引进的位错作了研究。这里所考虑的制作工艺过程包括热压键合、加热、淬火、接触材料的蒸发、切片和夹片。结果表明,热压键合引进了特别严重的损伤。最后推荐了几种位错密度引进得最小的最佳制作工艺过程。 Since dislocations are detrimental to the properties of gallium arsenide single crystals, dislocations introduced into the materials for some device fabrication processes (especially GDND) have been investigated. The fabrication processes considered here include thermocompression bonding, heating, quenching, evaporation of the contact material, slicing and clamping. The results show that hot press bonding introduces particularly serious damage. Finally, we recommend the best fabrication technology with the smallest introduction of dislocation density.