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本文研究了利用离子束溅射、快速退火等技术,通过 Co/Si 固相反应,形成高电导均匀CoSi_2薄膜.对Co/Si 固相反应过程,氧在其中的行为等进行了分析.制备的COSi_2薄膜电阻率达15μΩcm.在快速退火条件下,Co/(111)Si固相反应形成的薄膜具有择优晶向,表明存在固相外延机制.在 4—300 K范围内,对 CoSi_2薄膜的电学输运性质进行了系统研究,CoSi_2具有正值霍尔系数,表明其具有空穴导电机制.低温载流子霍尔迁移率达到 56 cm~2/V.3。
In this paper, the formation of highly conductive uniform CoSi_2 thin films by Co / Si solid state reaction was studied by using ion beam sputtering and rapid annealing techniques, the solid state reaction process of Co / Si and the behavior of oxygen in them were analyzed. The resistivity of COSi_2 thin film is 15μΩcm. The films formed by the solid state reaction of Co / (111) Si show the preferred crystal orientation under the rapid annealing conditions, indicating the existence of solid-phase epitaxy. In the range of 4-300 K, The transport properties have been studied systematically, and CoSi_2 has a positive Hall effect, indicating that it has a hole conduction mechanism. The mobility of low-temperature carriers reaches 56 cm -2 / V.3.