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本文详细介绍了在半导体激光器制造中采用控制蒸汽压温差法进行液相外延的原理、工艺过程以及实验结果的检测分析。这是一种按化学计量组分与晶格常数补偿生长完美晶体和晶格匹配的异质结的方法。我们制得的GaAs—Ga_(1-x)Al_xAs_(1-y)Py异质结晶格匹配达1×10~(-5),激光谱宽达1.61 A。用此法生长单层外延片,已获得室温载流子浓度～10~(15)(厘米)~(-3),室温迁移率～8000(厘米)~2/伏特·秒的高纯GaAs单晶。用腐蚀坑密度为5000(厘米)~(-2)的掺硅GaAs作衬底,可生长出腐蚀坑只有500(厘米)~(-2)以下的GaAs近完美晶体。这种液相外延新方法,用于制做半导体激光器和发光二极管,可获得高量子效率长寿命工作的器件。
In this paper, the principle, process and experimental results of liquid-phase epitaxy by controlling the vapor pressure and temperature difference method are introduced in detail in the manufacture of semiconductor lasers. This is a stoichiometric composition and lattice constant compensation for the growth of perfect crystal and lattice matching heterojunctions. The GaAs-Ga_ (1-x) Al_xAs_ (1-y) Py heterostructure lattice matched to 1 × 10 -5 lattice and the spectral width of the laser reaches 1.61 A. Single layer epitaxial wafers have been grown by this method and high purity GaAs single crystals have been obtained at room temperature with a carrier concentration of ~10 ~ (15) cm ~ (-3) and room temperature mobility of ~8000 cm ~ 2 / crystal. Using GaAs - doped SiAs with an etch pit density of 5000 (cm) -2 as the substrate, nearly perfect crystals of GaAs with etch pits of only 500 cm -2 or less can be grown. This new method of liquid phase epitaxy, used in the manufacture of semiconductor lasers and light-emitting diodes, can be obtained for high quantum efficiency, long-life devices.