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本文研究了薄ａ－Ｓｉ：Ｈ有源层结构的ａ－Ｓｉ：ＨＴＦＴ的特性，实验结果表明，当ａ－Ｓｉ：Ｈ层的厚度小于一个临界值时，ａ－Ｓｉ：Ｈ厚度的变化对ａ－Ｓｉ：ＨＴＦＴ静态特性的影响明显增大．文中详细分析了有源层背面空间电荷层对ａ－Ｓｉ：ＨＴＦＴ特性的影响，从表面有效空间电荷层的概念出发，从理论上分析了有源层厚度与阈值电压的关系，计算的临界有源层厚度为１３０ｎｍ，这与实验结果基本一致．关键词
In this paper, the properties of a-Si: HTFT in the thin a-Si: H active layer have been investigated. The experimental results show that when the thickness of the a-Si: H layer is less than a critical value, a-Si: HTFT static characteristics significantly increased. In this paper, the effect of the space charge layer on the a-Si: HTFT layer is analyzed in detail. The relationship between the active layer thickness and the threshold voltage is theoretically analyzed from the concept of the effective surface space charge layer. The critical The source layer thickness is 130 nm, which is consistent with the experimental results. Key words