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研究了非晶硅薄膜的瞬态光电导的光致变化情况 .用通常的非晶态半导体的瞬态光电流的乘方规律和稳态光电导的扩展指数规律都不能对试验数据进行很好的拟合 ,而采用两个指数函数相加的形式可以对实验数据进行很好的拟合 .这表明非晶硅薄膜长时间的衰退不是由带尾态决定 ,而是由深的陷阱决定的 .两个指数函数的衰退分别对应于距导带 0 .5 2 e V和 0 .5 9e V的两个陷阱 ,这两个陷阱可以被指认为带隙中的荷负电中心 .光照后 ,带隙中的复合中心增加 ,导致电子寿命的减少 ,从而引起光电导的衰退 .
The photoinduced changes of the transient photoconductivity of amorphous silicon thin films were studied.The power law of the usual photocathode and the extended exponential law of steady-state photoconductivity were not good for the experimental data , And the experimental data can be fitted well by using the addition of two exponential functions, which shows that the prolonged recession of the amorphous silicon film is not determined by the tailing state but by the deep trap The decay of the two exponential functions corresponds to two traps from 0,52 eV and 0,59 eV, respectively, of the conduction band, which can be identified as the negative charge center in the bandgap The recombination centers in the gaps increase, leading to a reduction in the life of the electrons, causing the photoconductivity to decay.