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用Ｘ光电子能谱（ＸＰＳ）、先致发光（ＰＬ）和俄歇电子能量谱（ＡＥＳ）研究Ｐ＿２Ｓ＿５／ＮＨ＿４ＯＨ对ｎ型ＧａＡｓ（１００）晶面的钝化作用．测试结果表明，钝化后在砷化镓（１００）面上的自然氧化物已被除去，表面形成了一层性质稳定的硫原子层．硫原子与砷、镓原子分别有效地成键，阻止了砷化镓表面氧化物的组成，并消除了表面存在的悬挂键，从而大大优化了ＧａＡｓ（１００）面的特性．ＰＬ实验结果支持了上述结论．实验结果表明钝化后ＧａＡｓ表面复合速度下降，表面态密度降低．
The passivation of P_2S_5 / NH_4OH to n-type GaAs (100) crystal planes was investigated by X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and Auger electron spectroscopy (AES) The test results show that the natural oxide on GaAs (100) surface after passivation has been removed and a stable sulfur atomic layer is formed on the surface. The sulfur atom and the arsenic and the gallium atom respectively effectively bond, preventing the composition of the gallium arsenide surface oxide and eliminating the dangling bonds existing on the surface, thereby greatly optimizing the characteristics of the GaAs (100) surface. The PL experiment results support the above conclusion. The experimental results show that the surface recombination velocity of GaAs decreases after passivation, and the surface state density decreases.