一、引言 为了适应厚薄膜混合集戍电路的需要,有必要研制各种平面膜式元件和微型外贴元件。我们在低阻单晶硅片上用热氧化法生长SiO_2介质,蒸发和光刻金属电极,试制了硅片MOS电容器。将这种电容器应用于薄膜相敏解调变换放大器,证明是适用的。 在厚薄膜电路中,常常用到几pF至200 I. INTRODUCTION In order to meet the needs of thick-film hybrid circuits, it is necessary to develop various planar membrane elements and miniature externally-attached elements. We use low thermal resistance silicon wafer grown by thermal oxidation of SiO 2 medium, evaporation and lithography metal electrodes, trial production of silicon MOS capacitors. This type of capacitor used in the phase-sensitive film demodulator amplifier, proved to be suitable. In thick film circuits, it is often used a few pF to 200