在金属片Mo上用恒电流电化学技术制备了从薄膜开始成核到生长结束不同时间的BaMoO_4晶态薄膜,并利用SEM、XRD等相关测试手段,对这些薄膜进行测试分析,结果发现,在相同的制备条件下,在薄膜生长的开始阶段,由于基底不平整(折叠、划痕、缺陷、凹凸不平)的位置电流密度要比平整处大,使得该处基片的溶解速率加快,形成的有利生长基元的数目就较多,故导致基底上不平整的位置BaMoO_4薄膜成核速率就大。 BaMoO_4 crystalline thin films were prepared by constant current electrochemical technique on the Mo from the start of film nucleation to the end of growth. The films were tested by SEM, XRD and other related testing methods. The results showed that in the Under the same preparation conditions, the current density in the initial stage of film growth is larger than that in the flat place due to the unevenness of the substrate (folding, scratches, defects and unevenness), so that the dissolution rate of the substrate at this point is accelerated. The number of favorable growth primitives is much, so lead to uneven substrate on the substrate BaMoO_4 film nucleation rate is large.