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量子点的光学特性与量子点的大小均匀性、密度、内部应变以及隔离层的厚度等有密切关系.文中从理论角度定量研究了GaNXAs1-X应变补偿层对InAs/GaAs量子点生长质量的改善作用,分析了应变补偿层对隔离层厚度减小的作用.讨论了应变补偿层的补偿位置和补偿层N组分X对量子点生长时局部应变和体系应变的补偿作用.分析了应变补偿层对体系应变的减少作用,并计算了相邻层量子点的垂直对准概率.研究结果对实验中应变补偿的优化和高质量量子点阵列的生长实现提供了理论依据.
The optical properties of QDs are closely related to the size uniformity, density, internal strain and the thickness of the QDs.In this paper, we quantitatively study the improvement of the growth quality of InAs / GaAs QDs by GaNXAs1-X strain compensation layer The effect of the strain compensation layer on the reduction of the thickness of the isolation layer is analyzed.The compensation position of the strain compensation layer and the compensation effect of the N component X of the compensation layer on the local strain and strain at the quantum dot growth are discussed.The effects of strain compensation layer Which can reduce the strain of the system and calculate the vertical alignment probability of the adjacent quantum dots.The research results provide a theoretical basis for the optimization of strain compensation and the growth of high quality quantum dot array in the experiment.